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FLL21E010MK
FEATURES
High Voltage - High Power GaAs FET
High Voltage Operation : VDS=28V High Power : P1dB=40dBm(typ.) at f=2.17GHz High Gain: G1dB=14dB(typ.) at f=2.17GHz Broad Frequency Range : 2100 to 2200MHz Proven Reliability
DESCRIPTION
The FLL21E010MK is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS Item Symbol
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Condition
Rating
32 -3 41.5 -65 to +175 200
Unit
V V W oC oC
VDS VGS Tc=25oC Pt Tstg Tch
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Item
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol
VDS IGF IGR Tch
Condition
RG=50 RG=50
Limit
<28 <47 >-2.5 155
Unit
V mA mA oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min.
Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Efficiency Thermal Resistance Vp VGSO P1dB G1dB d Rth Channel to Case VDS=5V IDS=1.5mA IGS=-15A VDS=28V f=2.17GHz IDS(DC)=125mA -0.1 -5 39.0 13.0 -
Limit Typ.
-0.2 40.0 14.0 40 3.1
Unit Max.
-0.5 3.6 V V dBm dB %
oC
/W
G.C.P.:Gain Compression Point
Edition 1.3 Mar 2004
1
FLL21E010MK
High Voltage - High Power GaAs FET
Output Power & Drain Efficiency vs. Input Power @VDS=28V IDS=125mA f=2.17GHz
41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 10 12 14 16 18 20 22 24 26 28 30 Input Pow er [dBm ] Pout Drain Efficiency
80 70 60 50 40 30 20 10 0 Drain Efficiency [%]
Output Power [dBm]
Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power @VDS=28V IDS=125mA fo=2.1325GHz f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation
-25 -30 -35
IMD [dBc]
Single-Carrier ACLR & Drain Efficiency vs. Output Power @VDS=28V IDS=125mA f=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation
40.0 35.0
Drain Efficiency [%]
-25 -30 -35
40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 24 26 28 30 32 34 36 Output Pow er [dBm ]
ALCR [dBc]
30.0 25.0 20.0 15.0 10.0 5.0 24 IM3 26 28 30 32 34 36 Output Pow er [dBm ] IM5 Drain Efficiency
-40 -45 -50 -55 -60
-40 -45 -50 -55 -60
+/-5MHz
+/-10MHz
Drain Efficiency
2
Drain Efficiency [%]
FLL21E010MK
High Voltage - High Power GaAs FET
S-Parameters @VDS=28V IDS=300mA f=0.5 to 5.0 GHz
+50j +25j
5. 0 5. 0
+100j
+10j
3. 0
4. 0 4. 0
+250j
0
2. 0 1. 0
3. 0
2. 0 1. 0
0. H z 5G
100
0. H z 5G
-10j
50 25
-250j
-25j -50j
10
-100j
S 11 S 22
+90
0. H z 5G
1. 0
180 8 6 Scale for |S21|
5
4
3
2. 0
0
0.3 0.4 -90
Scale for |S 12|
S 12 S 21
!freq(GHz)S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang) 0.1 0.958 -120.1 38.897 110.3 0.005 17.9 0.226 -81.4 0.2 0.948 -148.0 20.943 88.1 0.005 -1.4 0.291 -101.0 0.3 0.945 -158.9 13.801 74.6 0.005 -11.9 0.375 -111.0 0.4 0.946 -164.3 9.953 64.0 0.004 -12.0 0.459 -119.0 0.5 0.945 -167.8 7.598 55.3 0.004 -7.9 0.531 -125.8 1 0.956 -175.7 2.880 24.4 0.002 29.6 0.756 -150.1 1.1 0.953 -176.5 2.487 19.5 0.002 32.1 0.778 -153.5 1.2 0.955 -177.5 2.153 15.5 0.002 52.9 0.806 -156.5 1.3 0.956 -177.9 1.906 11.7 0.003 50.6 0.826 -159.6 1.4 0.954 -178.8 1.688 7.8 0.003 60.6 0.839 -162.2 1.5 0.956 -179.6 1.526 4.5 0.005 65.7 0.854 -164.2 1.6 0.952 -179.7 1.391 1.3 0.004 61.6 0.869 -166.4 1.7 0.955 179.8 1.255 -1.7 0.004 74.9 0.873 -168.7 1.8 0.955 178.8 1.154 -4.5 0.006 80.3 0.879 -170.1 1.9 0.959 178.3 1.070 -7.3 0.006 73.5 0.889 -172.1 1.95 0.953 178.1 1.023 -9.2 0.007 80.8 0.888 -173.0 2 0.956 177.8 0.984 -9.9 0.007 77.8 0.890 -173.7 2.05 0.960 177.6 0.961 -11.6 0.007 77.2 0.897 -174.2 2.1 0.952 177.4 0.920 -13.1 0.008 71.8 0.902 -175.1 2.11 0.959 177.2 0.920 -13.4 0.007 79.5 0.899 -175.5 2.12 0.960 177.5 0.910 -13.5 0.007 76.2 0.901 -175.5 2.13 0.957 176.9 0.908 -13.9 0.008 74.8 0.906 -175.7 2.14 0.958 177.1 0.902 -13.4 0.011 61.1 0.900 -175.8 2.15 0.955 176.9 0.891 -14.4 0.008 74.9 0.905 -176.0 2.16 0.952 176.7 0.889 -15.2 0.007 74.5 0.904 -176.3 2.17 0.957 176.8 0.878 -14.8 0.007 79.2 0.910 -176.5 2.18 0.959 176.8 0.873 -15.0 0.008 69.0 0.905 -176.6 2.19 0.961 176.7 0.869 -15.2 0.007 72.9 0.906 -176.5 2.2 0.954 176.5 0.855 -15.9 0.007 77.2 0.904 -177.0 2.25 0.956 176.7 0.832 -16.7 0.007 78.7 0.909 -177.4 2.3 0.953 175.9 0.810 -17.5 0.008 74.9 0.909 -178.0 2.35 0.956 175.4 0.784 -19.7 0.009 80.0 0.920 -178.4 2.4 0.958 175.4 0.771 -20.7 0.009 75.0 0.919 -179.3 2.5 0.950 174.6 0.731 -22.7 0.010 75.0 0.920 179.5 2.6 0.951 174.0 0.701 -25.0 0.011 78.1 0.922 178.6 2.7 0.947 173.6 0.673 -27.7 0.012 74.2 0.931 177.0 2.8 0.953 172.5 0.652 -30.1 0.011 75.5 0.924 175.7 2.9 0.944 171.6 0.635 -33.1 0.013 74.0 0.927 174.9 3 0.949 170.8 0.609 -35.5 0.014 70.5 0.930 173.5
3
FLL21E010MK
High Voltage - High Power GaAs FET
BOARD LAYOUT

16 V /1 0 F
r=10.45 t=1.2mm
4
FLL21E010MK
High Voltage - High Power GaAs FET
MK Package Outline Metal-Ceramic Hermetic Package
PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm
5
FLL21E010MK
High Voltage - High Power GaAs FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461
Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
TEL +81-45-853-8156 FAX +81-45-853-8170
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